? 2017 littelfuse, inc. specifcations are subject to change without notice. rev , revised: 10/31/17 rohs LSIC1MO120E0080 1200 v n-channel, enhancement-mode sic mosfet features applications ? optimiz ed for high- frequency, high-effciency applications ? extremely lo w gate charge and output capacitance ? l ow gate resistance for high-frequency switching ? normally -off operation at all temperatures ? ultra-lo w on-resistance ? high-frequency applications ? solar in verters ? s witch mode power supplies ? ups ? motor driv es ? high voltage dc/dc converters ? b attery chargers ? induction heating circuit diagram to-247-3l 21 3 * * body diode product summary characteristics value unit v ds 1200 v typical r ds(on) 80 m i d ( t c 100 c) 25 a ? lit telfuse rohs logo = rohs conform ? lit telfuse hf logo = halogen free ? lit telfuse pb-free logo = pb-free lead plating environmental rohs pb pb sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. rev , revised: 10/31/17 thermal characteristics maximum ratings characteristics symbol conditions value unit continuous drain current i d v gs = 20 v, t c = 25 c 39 a v gs = 20 v, t c = 100 c 25 pulsed drain current 1 i d(pulse) t c = 25 c 80 a power dissipation p d t c = 25 c, t j = 150 c 179 w operating junction temperature t j -55 to 150 c gate-source voltage v gs,max absolute maximum values -6 to 22 v v gs,op,tr transient, <1% duty cycle -10 to 25 v gs,op recommended dc operating values -5 to 20 storage temperature t stg - -55 to 150 c lead temperature for soldering t sold - 260 c mounting torque m d m3 or 6-32 screw 0.6 nm 5.3 in-lb footnote 1: pulse width limited by t j,max characteristics symbol value unit maximum thermal resistance, junction-to-case r th,jc,max 0.7 c/w maximum thermal resistance, junction-to-ambient r th,ja,max 40 c/w electrical characteristics (t j = 25 c unless otherwise specifed) characteristics symbol conditions min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 1200 - - v zero gate voltage drain current i dss v ds = 1200 v, v gs = 0 v - 1 100 a v ds = 1200 v, v gs = 0 v, t j = 150 c - 2 - gate leakage current i gss,f v gs = 20 v, v ds = 0 v - - 100 na i gss,r v gs = -10 v, v ds = 0 v - - 100 drain-source on-state resistance r ds(on) i d = 20 a, v gs = 20 v - 80 100 m i d = 20 a, v gs = 20 v, t j = 150 c - 105 - gate threshold voltage v gs,(th) v ds = v gs , i d = 10 ma 1. 8 2.8 4.0 v v ds = v gs , i d = 10 ma, t j = 150 c - 1. 9 - gate resistance r g f = 1 mhz, v ac = 25 mv - 1. 0 - sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. revised: 10/31/17 electrical characteristics (t j = 25 c unless otherwise specifed) characteristics symbol conditions value unit min typ max dynamic characteristics turn-on switching energy e on v dd = 800 v, i d = 20 a, v gs = -5/+20 v, r g,ext = 2 , l = 1.4 mh - 270 - j turn-off switching energy e off - 60 - total per-cycle switching energy e ts - 330 - input capacitance c iss v dd = 800 v, v gs = 0 v, f = 1 mhz, v ac = 25 mv - 1825 - pf output capacitance c oss - 75 - reverse transfer capacitance c rss - 15 - c oss stored energy e oss - 25 - j total gate charge q g v dd = 800 v, i d = 20 a, v gs = -5/+20 v - 95 - nc gate-source charge q gs - 29 - gate-drain charge q gd - 39 - turn-on delay time t d(on) v dd = 800 v, v gs = -5/+20 v, i d = 20 a, r g,ext = 2 , r l = 40 , timing relative to v ds - 10 - ns rise time t r - 10 - turn-off delay time t d(off) - 16 - fall time t f - 6 - reverse diode characteristics characteristics symbol conditions value unit min typ max diode forward voltage v sd i s = 10 a, v gs = 0 v - 3.8 - v i s = 10 a, v gs = 0 v, t j = 150 c - 3.4 - continuous diode forward current i s v gs = 0 v, t c = 25 c - - 35 a peak diode forward current 1 i sp - - 85 reverse recovery time t rr v gs = -5 v, i s = 20 a, v r = 800 v, di/dt = 5.3 a/ns - 25 - ns reverse recovery charge q rr - 185 - nc peak reverse recovery current i rrm - 16 - a footnote 1: pulse width limited by t j,max sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l LSIC1MO120E0080, 1200 v, 80 m ohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. rev , revised: 10/31/17 case te mperature, t c ( c) ma xi mum powe r di ssip at io n (w ) 0 20 40 60 80 10 0 12 0 14 0 16 0 18 0 20 0 -7 5- 25 25 75 12 51 75 figure 2: transfer characteristics ( v ds = 10 v ) figure 3: output char acteristics ( t j = 25 c ) figure 1: maximum p ower dissipation ( t j = 150 c ) 0 10 20 30 40 50 60 70 80 90 05 10 15 20 dr ai n cu rre nt , i d (a ) ga te -s our ce vo lt age, v gs (v ) 1 50 c 25 c -55 c figure 4: output char acteristics ( t j = 150 c ) 10v 12v 14v 16v 20v 18v 0 20 40 60 80 0246 81 0 drain current, i d (a ) drain-source voltage, v ds (v ) 10v 12v 14v v = 20v,18v, 16v 0 20 40 60 80 024681 0 dr ai n cu rre nt , i d (a ) dr ai n - so ur ce vo lt age, v ds (v ) gs figure 6: rev erse conduction characteristics ( t j = 25 c ) 0 10 20 30 40 50 60 70 80 01234567 reverse current, i s (a ) reverse voltage, v sd (v ) -5 v 0v 5v 10v v gs = 15v, 20v figure 5: output char acteristics ( t j = -55 c ) 0 20 40 60 80 024681 0 dr ai n cu rre nt , i d (a ) dr ai n - so ur ce vo lt age, v ds (v ) 10v 12v 14v 16v 20v 18v sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. revised: 10/31/17 figure 9: transient thermal impedance figure 10: safe operating area ( t c = 25 c ) 10 10 10 10 10 10 10 -6 -5 -4 -3 -2 -1 0 tr ansient th ermal impedance, z th,j c (normalized to r th ,j c ) pulse width (s ) 10 0 10 -1 10 -2 10 -3 0. 5 0. 3 0. 1 0. 05 0. 02 0. 01 si ngle pu ls e 10 s s 1 ms dc 0. 1 1 10 10 0 0. 11 01 00 0 drain current, i d (a ) drain -s ource voltage, v ds (v ) figure 11: on-resistance vs. drain current figure 12: normalized on-resistance 0 20 40 60 80 10 0 12 0 14 0 16 0 18 0 20 0 15 25 35 45 55 65 on-resistance, r ds (on) (m ) drain current, i d (a ) 25 c 150 c -5 5 c normalized on-resistance, r ds (on) junction t emperature, t j ( c) ( v = 20 v, i = 20 a ) gs d 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 -7 5- 50 -2 50 25 50 75 10 01 25 15 01 75 figure 7: reverse conduction characteristics ( t j = 150 c ) -5 v 0v 5v v = 10v,15v,20 v 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 reverse current, i s (a ) reverse voltage, v sd (v ) gs figure 8: reverse conduction characteristics ( t j = -55 c ) 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 reverse current, i s (a ) reverse voltage, v sd (v ) -5 v 0v 5v 10v vg s = 15v, 20 v sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l LSIC1MO120E0080, 1200 v, 80 m ohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. rev , revised: 10/31/17 figure 13: threshold voltage c) thr eshold vo lt age, v gs (th ) (v ) j unc ti on te mp erat ur e, t j ( (i d = 10 ma ) 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 3. 5 4. 0 -7 5- 50 -2 50 25 50 75 10 01 25 15 01 75 figure 14: drain-source blocking voltage ( c) no rm a liz ed bl o cki ng vo lt ag e, v ( br) d ss (v) j unc ti on te mp erat ur e, t j (i d = 2 50 a ) 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 -7 5- 50 -2 50 25 50 75 10 01 25 15 01 75 figure 15: junction capacitances figure 16: junction capacitances figure 17: c oss stored energy e oss figure 18: gate charge 10 10 0 1000 1000 0 02 00 40 06 00 80 01 00 0 capacitance (pf) drain voltage, v ds (v ) c c c is s os s rs s ( f = 1 mhz ) c c is s os s 05 01 00 15 02 00 drain voltage, v ds (v ) 10 100 1000 1000 0 capacitance (pf) ( f = 1 mhz ) rs s c 0 10 20 30 40 02 00 40 06 00 80 01 00 0 stored e nerg y, e oss ( j) drain voltage, v ds (v ) gate - source voltage, v gs (v ) gate charge, q g (nc) ( v = 800 v, i = 20 a ) dd d -5 0 5 10 15 20 01 0203040506070809 01 00 sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. revised: 10/31/17 figure 19: switching energy vs. drain current figure 20: switching energy vs. gate resistance e 0 20 0 40 0 60 0 80 0 10 00 12 00 01 02 03 04 05 0 sw it chi ng ener gy ( j) dr ai n cu rre nt , i d (a ) v dd = 800 v r g, ex t = 2 h v gs =- 5/+20v fw d = lsic2sd120a10 l = 1.4 mh t j = 25 c ts e on e off 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 0246 81 01 2 sw itching energy ( j ) external g ate resistance, r g,e xt ( ) v dd = 800 v i d = 20a v gs =- 5/+20v fw d = lsic2sd120a1 0 l = 1.4 mh t j = 25 c e ts e on e off package dimensions to-247-3l 1 a r0.93 5.44 5.44 2.46 recommended hole pattern layout unit: mm symbol millimeters min nom max a 4.902 5.029 5.156 a1 2.253 2.380 2.507 a2 1.854 1.981 2.108 d 20.828 20.955 21.082 e 15.773 15.900 16.027 e2 4.191 4.318 4.445 e2/2 1.473 1.524 1.575 e 5.436 l 20.066 20.193 20.320 l1 3.937 4.191 4.445 ?p 3.556 3.067 3.658 q 5.486 5.613 5.740 s 6.045 6.172 6.299 b 0.991 - 1.397 b1 0.991 1.199 1.346 b2 1.651 - 2.387 b3 1.651 1.999 2.336 b4 2.591 - 3.429 b5 2.591 3.000 3.378 c 0.381 0.635 0.889 c1 0.381 0.610 0.838 d1 17.399 17.526 17.653 d2 1.067 1.194 1.321 e1 13.894 14.021 14.148 ?p1 7.061 7.188 7.315 notes: 1. dimensions are in millimeters 2. dimension d, e do not include mold fash. mold fash shall not exceed 0.127 mm per side measured at outer most extreme of plastic body. 3.? p to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of 3.912 mm. sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l LSIC1MO120E0080, 1200 v, 80 m ohm, to-247-3l
? 2017 littelfuse, inc. specifcations are subject to change without notice. rev , revised: 10/31/17 packing options part number marking packing mode m.o.q LSIC1MO120E0080 sic1mo120e0080 tube 450 part numbering and marking system sic 1 mo e = to-247-3l yy ww d zzzzzz-zz 120 0080 sic1mo120e0080 yywwd zzzzzz-zz l f = sic = mosfet = voltage rating (1200 v) = gen1 = r ds(on) (80 mohm) = w eek = s pecial code = lot number = year packing specifcation to-247-3l f a ; f ; ? f ; f f f f f f a note: 1. all pin plug holes are considered critical dimension 2. tolerance is to be 0.010 unless otherwise specified 3. dimension are in inch (and millimeters). ? a a ; f ; ? ? f ; f f f f f f f disclaimer notice - littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable littelfuse product documentation. warranties granted by littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable littelfuse documentation. littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by littelfuse as set forth in applicable littelfuse documentation. the sale and use of littelfuse products is subject to littelfuse terms and conditions of sale, unless otherwise agreed by littelfuse. information furnished is believed to be accurate and reliable. however, users should independently evaluate the suitability of and test each product selected for their own applications. littelfuse products are not designed for, and may not be used in, all applications. read complete disclaimer notice at www.littelfuse.com/disclaimer-electronics . sic mosfet LSIC1MO120E0080, 1200 v, 80 mohm, to-247-3l
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